CHARACTERIZATION OF HIGH-QUALITY A-SIC-H FILMS PREPARED BY HYDROGEN-RADICAL CVD METHOD

Authors
ANDOH N NAGAYOSHI H KANBASHI T KAMISAKO K
Citation
N. Andoh et al., CHARACTERIZATION OF HIGH-QUALITY A-SIC-H FILMS PREPARED BY HYDROGEN-RADICAL CVD METHOD, Solar energy materials and solar cells, 49(1-4), 1997, pp. 89-94
Citations number
5
Categorie Soggetti
Energy & Fuels","Material Science
Journal title
Solar energy materials and solar cells → ACNP
ISSN journal
09270248
Volume
49
Issue
1-4
Year of publication
1997
Pages
89 - 94
Database
ISI
SICI code
0927-0248(1997)49:1-4<89:COHAFP>2.0.ZU;2-W
Abstract
High-quality a-SiC:H films have been prepared by using a hydrogen-radi cal CVD method. Si2H6 and C2H2 were used as source gases, and C2H2 was introduced by decomposing with microwave plasma. Consequently, carbon content and optical band gap could be controlled well by C2H2 the flo w rate. It was confirmed that very stable a-SiC:H films can be produce d by this technique.