FABRICATION OF AMORPHOUS-SILICON P-I-N SOLAR-CELLS USING ION SHOWER DOPING TECHNIQUE

We have studied the fabrication of amorphous silicon (a-Si:H) p-i-n so lar cells using an ion shower doped n(+)-layer. The p-i-n cells with i on-doped n(+)-layer exhibited open-circuit voltage of > 0.8 V, fill fa ctor of > 0.62 and conversion efficiency of > 8.4% when the ion accele ration voltage was between 3 and 7 kV. The a-Si:H p-i-n solar cell fab ricated under an optimized ion-doping condition exhibited an open-circ uit voltage of 0.84 V, a fill factor of 0.66 and a conversion efficien cy of 9.9% which was very similar to those of conventional a-Si:H p-i- n cells fabricated in the same deposition chamber. Therefore, ion show er doping technique can be applied to fabricate large area, high perfo rmance a-Si:H p-i-n solar cells.