MICROCRYSTALLINE SILICON FILMS AND TANDEM SOLAR-CELLS PREPARED BY TRIODE PECVD

Authors
LIAO XB SHENG SR YUN F MA ZX KONG GL ZHAO YW HE SQ LI ZM
Citation
Xb. Liao et al., MICROCRYSTALLINE SILICON FILMS AND TANDEM SOLAR-CELLS PREPARED BY TRIODE PECVD, Solar energy materials and solar cells, 49(1-4), 1997, pp. 171-177
Citations number
7
Categorie Soggetti
Energy & Fuels","Material Science
Journal title
Solar energy materials and solar cells → ACNP
ISSN journal
09270248
Volume
49
Issue
1-4
Year of publication
1997
Pages
171 - 177
Database
ISI
SICI code
0927-0248(1997)49:1-4<171:MSFATS>2.0.ZU;2-W
Abstract
This paper investigates the effects of the diphasic structure on the o ptoelectronic properties of hydrogenated microcrystalline silicon (mu c-Si:H) films prepared in a triode three-chamber plasma-enhanced chemi cal vapor deposition (PECVD) system. The influences of boron-compensat ion doping on the dark-and photo-conductivity of mu c-Si:H films are a lso described. A tandem solar cell with an entirely mu c-Si:H p-i-n bo ttom cell and an a-Si:H top cell has been prepared with an initial con version efficiency of 8.91% (0.126 cm(2), AM1.5, 100 mW/cm(2)).