LARGE-AREA ZNO FILMS OPTIMIZED FOR GRADED BAND-GAP CU(INGA)SE-2-BASEDTHIN-FILM MINI-MODULES

Citation
Nf. Cooray et al., LARGE-AREA ZNO FILMS OPTIMIZED FOR GRADED BAND-GAP CU(INGA)SE-2-BASEDTHIN-FILM MINI-MODULES, Solar energy materials and solar cells, 49(1-4), 1997, pp. 291-297
Citations number
9
Categorie Soggetti
Energy & Fuels","Material Science
ISSN journal
09270248
Volume
49
Issue
1-4
Year of publication
1997
Pages
291 - 297
Database
ISI
SICI code
0927-0248(1997)49:1-4<291:LZFOFG>2.0.ZU;2-D
Abstract
In this study, two deposition methods (i.e. MOCVD and sputtering metho ds) to prepare n-type ZnO window layers for CIGS-based thin-film solar cells are discussed. In order to make ZnO:Al transparent conductive o xide (TCO) films prepared by DC magnetron sputtering comparable to ZnO : BTCO prepared by MOCVD, a new ZnO sputtering process is proposed by introducing a multilayer structure. Using these films, CIGS thin-film solar cells with efficiencies of greater than 14% have been fabricate d with an active area of 3.2 cm(2). This structure was adapted to fabr icate CIGS thin-film mini-modules with efficiencies around 11% having aperture area of 50 cm(2).