EXAMINATION OF BLOCKING CURRENT-VOLTAGE BEHAVIOR THROUGH DEFECT CHALCOPYRITE LAYER IN ZNO CDS/CU(IN,GA)SE-2/MO SOLAR-CELL/

Blocking current-voltage behaviour of ZnO/CdS/Cu(In,Ga)Se-2/Mo solar c ells, which is either temperature-or light-conditioned, is examined us ing a comprehensive numerical device simulator. Effects of defect stat es in the defect-chalcopyrite layer and at the CdS/defect-chalcopyrite interface are investigated, Acceptor-like defect states either in a d efect-chalcopyrite layer or at the CdS/defect-chalcopyrite interface c ause different trapping under red light or white light. This results i n different potential profiles throughout the structure, which determi ne the changeable I-V behaviour under forward bias. Simulation results show that these acceptor-like defect states can also control the temp erature-conditioned blocking I-V behaviour.