M. Topic et al., EXAMINATION OF BLOCKING CURRENT-VOLTAGE BEHAVIOR THROUGH DEFECT CHALCOPYRITE LAYER IN ZNO CDS/CU(IN,GA)SE-2/MO SOLAR-CELL/, Solar energy materials and solar cells, 49(1-4), 1997, pp. 311-317
Blocking current-voltage behaviour of ZnO/CdS/Cu(In,Ga)Se-2/Mo solar c
ells, which is either temperature-or light-conditioned, is examined us
ing a comprehensive numerical device simulator. Effects of defect stat
es in the defect-chalcopyrite layer and at the CdS/defect-chalcopyrite
interface are investigated, Acceptor-like defect states either in a d
efect-chalcopyrite layer or at the CdS/defect-chalcopyrite interface c
ause different trapping under red light or white light. This results i
n different potential profiles throughout the structure, which determi
ne the changeable I-V behaviour under forward bias. Simulation results
show that these acceptor-like defect states can also control the temp
erature-conditioned blocking I-V behaviour.