EPITAXIAL N-SI P-CUINS2 HETEROJUNCTION DEVICES/

We present and characterize the first epitaxial Si/CuTnS(2) heterojunc tion devices. By means of molecular beam epitaxy (MBE), slightly coppe r-rich CuInS2 epilayers are deposited on sulphur-terminated Si-(1 1 1) surfaces of n-type wafers. Both the quality of the substrate and the deposited epilayer are controlled in situ using low-energy electron di ffraction (LEED) and Auger electron spectroscopy (AES) and various oth er methods including transmission electron microscopy (TEM) are applie d in the ex situ structural characterization. The heterojunction diode s are completed by the deposition of an indium-tin oxide (ITO) layer a nd of metallic contacts. Their electronic and structural properties ar e discussed.