R. Klenk et al., PROPERTIES OF CUINS2 THIN-FILMS GROWN BY A 2-STEP PROCESS WITHOUT H2S, Solar energy materials and solar cells, 49(1-4), 1997, pp. 349-356
CuInS2 thin films were prepared by sulfurization of sequentially depos
ited Cu/In stacks with elemental sulfur. Precursors as well as reacted
films are characterized by scanning electron microscopy (SEM), energy
dispersive X-ray analysis (EDX) and X-ray diffraction (XRD). Excess c
opper is required for optimum properties and leads to a CuS secondary
phase segregated at the surface. Stoichiometry is regained by etching
after which heterojunctions are formed by deposition of a CdS/ZnO wind
ow layer. An active area efficiency of 10.4% has been achieved.