K. Topper et al., EFFECTS OF POSTDEPOSITION TREATMENT ON THE PL SPECTRA AND THE HYDROGEN CONTENT OF CUINS2 ABSORBER LAYERS, Solar energy materials and solar cells, 49(1-4), 1997, pp. 383-390
CuInS2 absorber layers for thin-film solar cells are examined in this
work. The influence of post-deposition annealing in hydrogen and oxyge
n atmosphere is studied by means of photoluminescence (PL) and nuclear
reaction analysis (NRA). The intensity of a PL peak at 1.445 eV can b
e drastically influenced by post-deposition treatments. This transitio
n is ascribed to the donor-acceptor pair recombination between a sulfu
r vacancy and a copper vacancy. From the measurements, a simple defect
model is deduced which assumes the occupation of sulfur vacancies by
oxygen. The sulfur vacancy can be activated by hydrogen annealing and
passivated by oxygen annealing.