PREPARATION AND EVALUATION OF CU2ZNSNS4 THIN-FILMS BY SULFURIZATION OF E-B EVAPORATED PRECURSORS

Authors
KATAGIRI H SASAGUCHI N HANDO S HOSHINO S OHASHI J YOKOTA T
Citation
H. Katagiri et al., PREPARATION AND EVALUATION OF CU2ZNSNS4 THIN-FILMS BY SULFURIZATION OF E-B EVAPORATED PRECURSORS, Solar energy materials and solar cells, 49(1-4), 1997, pp. 407-414
Citations number
4
Categorie Soggetti
Energy & Fuels","Material Science
Journal title
Solar energy materials and solar cells → ACNP
ISSN journal
09270248
Volume
49
Issue
1-4
Year of publication
1997
Pages
407 - 414
Database
ISI
SICI code
0927-0248(1997)49:1-4<407:PAEOCT>2.0.ZU;2-V
Abstract
By sulfurization of E-B evaporated precursors, CZTS(Cu2ZnSnS4) films c ould be prepared successfully. This semiconductor does not consist of any rare-metal such as In. The X-ray diffraction pattern of CZTS thin films showed that these films had a stannite structure. This study est imated the optical band gap energy as 1.45 eV. The optical absorption coefficient was in the order of 10(4) cm(-1). The resistivity was in t he the order of 10(4) Ohm cm and the conduction type was p-type. Fabri cated solar cells, Al/ZnO/CdS/CZTS/Mo/Soda Lime Glass, showed an open- circuit voltage up to 400 mV.