LARGE-AREA PULSED-LASER DEPOSITION OF AURIVILLIUS-TYPE LAYERED PEROVSKITE THIN-FILMS

Thin films of Aurivillius-type layered perovskites of Bi4Ti3O12 and Sr Bi2Ta2O9 have been epitaxially deposited by PLD on SrTiO3 single cryst al substrates. Bi4Ti3O12 has been deposited as well on a CeO2/YSZ/Si(1 00) buffer layer, and on Pt-coated oxidized silicon for electrical mea surements. Using a new technique for large area PLD, Bi4Ti3O12 has als o been deposited on a whole (100)-oriented 3 '' Si wafer. The obtained films have a homogeneous thickness over the whole wafer corresponding to an area of about 45 cm(2). The composition, structure, and electri cal properties of the films are presented.