PYROELECTRIC THIN-FILM SENSOR ARRAYS INTEGRATED ON SILICON

Sol-gel deposited Pb(Ti,Zr)O-3 thin films have been used to integrate pyroelectric arrays on silicon. The arrays of 1x12 (element size of 60 0 x 1100 mm(2)) and 1x50 elements (element size of 140 x 1100 mm(2)) a re fabricated by standard photolithography techniques on top of a SiO2 /Si3N4 buffer layer which acts as a thermally insulating membrane afte r micromachining of the silicon. The devices have been characterized u sing a large aperture blackbody radiation source operating at 423 K. I ts radiation is focussed by an infrared optics onto a single element a nd provides a power density of 67 W/m(2). A voltage responsivity of 46 0 V/W at a chopping frequency of 1 Hz is achieved. The frequency depen dencies of the obtained current and voltage responsitivities allow to deduce the thermal and electrical time constants which are compared to thermal finite element calculations and the electrical circuit model.