NEW SEMICONDUCTING SUBSTRATE FOR HETEROEPITAXIAL GROWTH OF K1-YNAYTA1-XNBXO3

Authors
PIERHOFER H SITAR Z GITMANS F WUEST H GUNTER P
Citation
H. Pierhofer et al., NEW SEMICONDUCTING SUBSTRATE FOR HETEROEPITAXIAL GROWTH OF K1-YNAYTA1-XNBXO3, Ferroelectrics, 201(1-4), 1997, pp. 269-275
Citations number
15
Categorie Soggetti
Physics, Condensed Matter","Material Science
Journal title
Ferroelectrics → ACNP
ISSN journal
00150193
Volume
201
Issue
1-4
Year of publication
1997
Pages
269 - 275
Database
ISI
SICI code
0015-0193(1997)201:1-4<269:NSSFHG>2.0.ZU;2-9
Abstract
A new semiconducting substrate for the liquid phase epitaxy of K1-yNay Ta1-xNbxO3 has been grown. By doping with Ba a decrease of resistivity up to ten orders of magnitude from 10(11) Omega m for pure KTaO3 to 2 0 Omega m has been measured in the temperature range down to a few Kel vin. In addition the induced change in absorption constant in the UV/V IS/IR has been examined.