SMECTIC C TWIST GRAIN-BOUNDARY PHASE (TGB(C)) UNDER EXTERNAL ELECTRIC-FIELD

Citation
P. Barois et al., SMECTIC C TWIST GRAIN-BOUNDARY PHASE (TGB(C)) UNDER EXTERNAL ELECTRIC-FIELD, Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals, 302, 1997, pp. 215-221
Citations number
18
Categorie Soggetti
Crystallography
ISSN journal
1058725X
Volume
302
Year of publication
1997
Pages
215 - 221
Database
ISI
SICI code
1058-725X(1997)302:<215:SCTGP(>2.0.ZU;2-C
Abstract
We modelize the behavior of a TGB(C) under an external electric field applied perpendicular to the pitch direction. A comparaison with x-ray diffraction measurements is presented.