DETERMINATION OF STRAIN IN EPITAXIAL SEMICONDUCTOR STRUCTURES BY HIGH-RESOLUTION X-RAY-DIFFRACTION

High-resolution X-ray diffraction is used to obtain the strain profile of a wide range of epitaxial semiconductor samples. The samples are d ivided into five categories: Strained layers on a substrate, (partly) relaxed layers on a substrate, strained-layer superlattice structures, multiple relaxed layers and relaxed superlattice structures and ion-i mplanted samples. For each category a measurement strategy and analysi s method is given. Representative examples for each category are shown .