ALGAAS VERTICAL-CAVITY SURFACE-EMITTING LASER RESPONSES TO 4.5-MEV PROTON IRRADIATION

Citation
H. Schone et al., ALGAAS VERTICAL-CAVITY SURFACE-EMITTING LASER RESPONSES TO 4.5-MEV PROTON IRRADIATION, IEEE photonics technology letters, 9(12), 1997, pp. 1552-1554
Citations number
11
Categorie Soggetti
Optics,"Physics, Applied
ISSN journal
10411135
Volume
9
Issue
12
Year of publication
1997
Pages
1552 - 1554
Database
ISI
SICI code
1041-1135(1997)9:12<1552:AVSLRT>2.0.ZU;2-2
Abstract
We have irradiated single-and multimode AlGaAs vertical-cavity surface -emitting laser (VCSEL) arrays operating at a nominal wavelength of 78 0 nn with 4.5-MeV protons and doses ranging from 10 to 30 Mrad in the active region, We observed a peak power reduction of about 2% per Mrad in the 14-mu m aperture, multimode VCSEL's, Single-mode VCSEL's havin g an aperture of 6 mu m exhibited a smaller peak power reduction of 0. 4%-1% per Mrad. A slight shift in the current threshold was observed o nly for the multimode VCSEL's at dose levels above 10 Mrad, First resu lts indicate a reduced VCSEL peak laser power output that is dominated by a temperature shift caused by the radiation induced increase in re sistive heating, In contrast, the power reduction in edge-emitting las ers is dominated by the enhanced radiation induced nonradiative recomb ination rate. The VCSEL irradiation was performed with a focused ion m icro beam that was rastered over the device surface, ensuring a very u niform exposure of a single device in the array.