TEMPERATURE PERFORMANCE OF 1.3-MU-M INGAASP-INP LASERS WITH DIFFERENTPROFILE OF P-DOPING

Temperature dependencies of the threshold current, device slope effici ency, and heterobarrier electron leakage current from the active regio n of InGaAsP-InP multiquantum-well (MQW) lasers with different profile s of acceptor doping were measured, We demonstrate that the temperatur e sensitivity of the device characteristics depends on the profile of p-doping, and that the variance in the temperature behavior of the thr eshold current and slope efficiency for lasers with different doping p rofiles cannot be explained by the change of the measured value of the leakage current with doping only, The entire experimental data can be qualitatively explained by suggesting that doping can affect the valu e of electrostatic band profile deformation that affects temperature s ensitivity of the output device characteristics. We show that doping o f the p-cladding/SCH layer interface in InGaAsP-InP MQW lasers leads t o improvement of the device temperature performance.