RAMAN-SPECTROSCOPY ON CDZNSE ZNSE QUANTUM WIRES/

CdZnSe/ZnSe quantum wires with lateral widths down to 20 nm were produ ced by means of electron beam lithography and wet chemical etching. In order to study the wire width dependence of the vibronic properties, micro resonance Raman spectroscopy has been performed. By this method Raman spectra could be obtained as a function of the wire width. The R aman spectra taken from the Cd0.1Zn0.9Se wires showed only one peak in the wavenumber region of the ZnSe LO phonon. Due to the small Cd cont ent the ZnSe LO phonon of the barrier layer and the ZnSe-like LO phono n of the Cd0.1Zn0.9Se layer are not separated from each other. Neverth eless, a wire width dependence of the LO phonon wavenumber position is observed. This behavior is due to strain relaxation in the biaxially strained Cd0.1Zn0.9Se layer.