EFFECT OF PREPARATION CONDITIONS ON SHORT CIRCUITS IN SOL-GEL-DERIVEDLEAD TITANATE THIN-FILMS

A model is proposed by which pore interconnection during firing is res ponsible for short circuits in thin films. According to this model, th e number of short-circuited electrodes can be decreased significantly by suppressing the pore growth, which is achieved by optimizing the hy drolysis conditions of the coating solution and the rapid thermal anne aling of the film. At the same time, it became clear that a sol-gel-de rived thin film essentially involves a short-circuit probability. The dielectric properties obtained were epsilon = 188 and tan delta = 8% w hen fired at 800 degrees C, for example.