MODELING OF HOOGE PARAMETER OF ELECTRONS IN HEAVILY PHOSPHORUS-DOPED SILICON AT LOW-TEMPERATURES

Authors
XIAO ZX WEI TL
Citation
Zx. Xiao et Tl. Wei, MODELING OF HOOGE PARAMETER OF ELECTRONS IN HEAVILY PHOSPHORUS-DOPED SILICON AT LOW-TEMPERATURES, International journal of electronics, 82(3), 1997, pp. 219-226
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
International journal of electronics → ACNP
ISSN journal
00207217
Volume
82
Issue
3
Year of publication
1997
Pages
219 - 226
Database
ISI
SICI code
0020-7217(1997)82:3<219:MOHPOE>2.0.ZU;2-A
Abstract
The Hooge parameter alpha(HnD) of electrons in heavily phosphorus-dope d silicon (N-D > 3 x 10(18) cm(-3)) is modelled by the Fermi-Dirac dis tribution function. The main results show that alpha(HnD) decreases wi th decreasing temperature when N-D is about equal to 5 x 10(18) cm(-3) , and that (alpha(HnD) decreases with increasing temperature when N-D is higher than 10(20) cm(-3). alpha(HnD) is mainly determined by the 1 /f noise from the scattering of the electron-ionized impurity at high doping concentrations.