Jv. Sali et al., PREPARATION OF HIGHLY CONDUCTIVE P-TYPE MU-C-SI-H WINDOW LAYER USING LOWER CONCENTRATION OF HYDROGEN IN THE RF GLOW-DISCHARGE PLASMA, Solar energy materials and solar cells, 45(4), 1997, pp. 413-421
Boron doped p-type hydrogenated microcrystalline silicon (mu c-Si:H) f
ilms have been prepared by radio-frequency glow discharge method. High
ly conductive p-type mu c-Si:H films can be obtained even with lower c
oncentration of hydrogen in the rf glow discharge plasma if chamber pr
essure is low. Effects of increase in hydrogen (H-2) flow rate and cha
mber pressure have been studied. The structural properties of the film
s have been studied by X-ray diffractometry. The electrical and optica
l characterization have been done by dark conductivity, Hall measureme
nts and optical absorption measurements respectively. Film with conduc
tivity 0.1(Omega-cm)(-1) with band gap 2.1 eV has been obtained.