PREPARATION OF HIGHLY CONDUCTIVE P-TYPE MU-C-SI-H WINDOW LAYER USING LOWER CONCENTRATION OF HYDROGEN IN THE RF GLOW-DISCHARGE PLASMA

Authors
SALI JV PANASKAR VD TAKWALE MG MARATHE BR BHIDE VG
Citation
Jv. Sali et al., PREPARATION OF HIGHLY CONDUCTIVE P-TYPE MU-C-SI-H WINDOW LAYER USING LOWER CONCENTRATION OF HYDROGEN IN THE RF GLOW-DISCHARGE PLASMA, Solar energy materials and solar cells, 45(4), 1997, pp. 413-421
Citations number
11
Categorie Soggetti
Energy & Fuels","Material Science
Journal title
Solar energy materials and solar cells → ACNP
ISSN journal
09270248
Volume
45
Issue
4
Year of publication
1997
Pages
413 - 421
Database
ISI
SICI code
0927-0248(1997)45:4<413:POHCPM>2.0.ZU;2-X
Abstract
Boron doped p-type hydrogenated microcrystalline silicon (mu c-Si:H) f ilms have been prepared by radio-frequency glow discharge method. High ly conductive p-type mu c-Si:H films can be obtained even with lower c oncentration of hydrogen in the rf glow discharge plasma if chamber pr essure is low. Effects of increase in hydrogen (H-2) flow rate and cha mber pressure have been studied. The structural properties of the film s have been studied by X-ray diffractometry. The electrical and optica l characterization have been done by dark conductivity, Hall measureme nts and optical absorption measurements respectively. Film with conduc tivity 0.1(Omega-cm)(-1) with band gap 2.1 eV has been obtained.