0.12-MU-M GATE III-V NITRIDE HFETS WITH HIGH CONTACT RESISTANCES

HFET's with 0.12-mu m gate length were fabricated on a III-V nitride w afer, The contact resistance from unannealed Ti/Au ohmic contact was 1 0 Omega . mm. Even with this relatively high contact resistance, f(T) of 469 GHz and f(max) of 103 GHz were measured with the Ti/Au contacts , the highest yet achieved on III-V nitride FET's. The improvement in the frequency response was mainly due to the decrease in the gate leng th (0.12 mu m). In addition, the effects of high contact resistances a t high frequency are discussed.