0.1-MU-M T-GATE AL-FREE INP INGAAS/INP PHEMTS FOR W-BAND APPLICATIONSUSING A NITROGEN CARRIER FOR LP-MOCVD GROWTH/

Authors
SCHIMPF K SOMMER M HORSTMANN M HOLLFELDER M VANDERHART A MARSO M KORDOS P LUTH H
Citation
K. Schimpf et al., 0.1-MU-M T-GATE AL-FREE INP INGAAS/INP PHEMTS FOR W-BAND APPLICATIONSUSING A NITROGEN CARRIER FOR LP-MOCVD GROWTH/, IEEE electron device letters, 18(4), 1997, pp. 144-146
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
18
Issue
4
Year of publication
1997
Pages
144 - 146
Database
ISI
SICI code
0741-3106(1997)18:4<144:0TAIIP>2.0.ZU;2-K
Abstract
We report on the de and RF performance of HEMT's based on the Al-free material system InP/InGaAs/InP. These structures were grown by LP-MOCV D using a nitrogen carrier, The influence of gate length and channel c omposition on the performance of these devices is investigated. We dem onstrate that optimum de and RF performance using highly strained chan nels can be obtained only if additional composite channels are grown, The cutoff frequencies f(T) = 160 GHz and f(max) = 260 GHz for a 0.1-m u m T-gate device indicate the suitability of our devices for W-Band a pplications.