SILICON PHOTOCATHODES WITH ARRAY OF TIPS IN A PHOTO-INJECTOR

Citation
A. Aboubacar et al., SILICON PHOTOCATHODES WITH ARRAY OF TIPS IN A PHOTO-INJECTOR, Applied surface science, 111, 1997, pp. 246-250
Citations number
15
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
ISSN journal
01694332
Volume
111
Year of publication
1997
Pages
246 - 250
Database
ISI
SICI code
0169-4332(1997)111:<246:SPWAOT>2.0.ZU;2-A
Abstract
Photo-injectors for linear accelerators and free electron laser need a high brightness photocathode with a dark current lower than 10 mA. Si licon with array of tips shows a photofield emission current with a co ntinuous argon laser with a quantum yield of 1%. The ratio eta between photofield and field emission (dark) current is 20 near the threshold of Field emission. With a pulsed Nd-YAG laser(lambda = 1.02 mu m puls es of 35 ps duration) we observe a pure photoemission charge (70 pC) w ith harmonic 4 (HBAR omega(4) = 4.68 eV) and a photofield charge above the threshold which is 700 pC with harmonic 2 (HBAR omega(2) = 2.34 e V). We calculate for the photo-injector CANDELA the dark current follo wing the method of Loew and Wang, starting from the experimental Fowle r-Nordheim curve and we find a dark current which is 1 mu A at 3 GHz a t E(max) = 30 MV/m.