NANOSCALE PATTERNING OF SILICON DIOXIDE THIN-FILMS BY CATALYZED HF VAPOR ETCHING

Carbon enhanced vapor etching (CEVE) is an alternative approach for fi ne pattern delineation in silicon dioxide, especially for nanolithogra phic processes. Exposures by a scanning electron microscope have achie ved etch rates of about 16 nm min(-1) with etch selectivity ratios of 30 or greater for exposed to unexposed areas. Scanning tunneling micro scope resolution studies have shown that trench widths on the order of 3-5 nm are possible. Pattern transfer to silicon has been achieved us ing reactive ion etching.