CHROMATIC MONITORING FOR THE PROCESSING OF MATERIALS WITH PLASMAS

Citation
Pc. Russell et al., CHROMATIC MONITORING FOR THE PROCESSING OF MATERIALS WITH PLASMAS, IEE proceedings. A, Science, measurement and technology, 141(2), 1994, pp. 99-104
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
09607641
Volume
141
Issue
2
Year of publication
1994
Pages
99 - 104
Database
ISI
SICI code
0960-7641(1994)141:2<99:CMFTPO>2.0.ZU;2-H
Abstract
A non-invasive monitoring system for material-processing plasmas has b een developed based on chromatic modulation. The monitor consists of t wo parts, one for monitoring the emission spectra of plasmas and the s econd for monitoring the thickness of films on semiconductors during e tching or deposition. These chromatic systems offer significant speed advantages over equivalent spectroscopic techniques. Both systems have been tested on a variety of plasma chambers and typical results from both systems are presented. Chromatic monitoring provides rapid feedba ck on the state of a plasma and on film thickness, providing the possi bility for real-time monitoring and control of the plasma state. Furth er enhancement of the chromatic techique allows two-dimensional monito ring of the plasma, providing information on its uniformity.