ELECTRICAL CHARACTERISTICS OF NEARLY RELAXED INAS GAP HETEROJUNCTIONS/

The electrical properties of lattice mismatched InAs/GaP heterojunctio ns are examined. In spite of a high dislocation density at the heteroi nterface, the current versus voltage characteristics show nearly ideal behavior with low reverse leakage currents and high breakdown voltage s. The forward current varied exponentially with bias displaying ideal factors of 1.10 or less. Band offsets estimated from current-voltage and capacitance-voltage analysis are consistent with previous estimate s based on differences in Schottky barrier heights. (C) 1997 American Institute of Physics.