PHOTOREFRACTIVE MULTIPLE-QUANTUM-WELL DEVICE USING QUANTUM DOTS AS TRAPPING ZONES

Results on the optical properties of a GaInAs/GaInAsP multiple quantum well photorefractive device operating at 1.55 mu m in the longitudina l quantum-confined Stark geometry are reported. Self-assembling quantu m dots (SAQDs) have been used in this device to trap the photocarriers in two regions out of the multiple quantum well. An efficient screeni ng of applied electric field and the possibility to reduce the lateral diffusion of carriers with SAQDs are demonstrated. Finally, degenerat e four-wave mixing measurements were performed in this device. (C) 199 7 American Institute of Physics.