NEW INTERPRETATION OF THE DOMINANT RECOMBINATION CENTER IN PLATINUM DOPED SILICON

Authors
SACHSE JU SVEINBJORNSSON EO JOST W WEBER J LEMKE H
Citation
Ju. Sachse et al., NEW INTERPRETATION OF THE DOMINANT RECOMBINATION CENTER IN PLATINUM DOPED SILICON, Applied physics letters, 70(12), 1997, pp. 1584-1586
Citations number
26
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
12
Year of publication
1997
Pages
1584 - 1586
Database
ISI
SICI code
0003-6951(1997)70:12<1584:NIOTDR>2.0.ZU;2-E
Abstract
The midgap level in platinum doped ii-type silicon, which was proposed to be the dominant recombination center, is identified as a platinum- hydrogen complex. Hydrogenation elf the samples is achieved by wet-che mical etching at room temperature. Defect profiles. determined by deep level transient spectroscopy, clearly associate the level with the co ncentration profile of atomic hydrogen. (C) 1997 American Institute of Physics.