DEPOSITION OF HIGH-QUALITY NIMNSB MAGNETIC THIN-FILMS AT MODERATE TEMPERATURES

Citation
Ja. Caballero et al., DEPOSITION OF HIGH-QUALITY NIMNSB MAGNETIC THIN-FILMS AT MODERATE TEMPERATURES, Journal of applied physics, 81(6), 1997, pp. 2740-2744
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
81
Issue
6
Year of publication
1997
Pages
2740 - 2744
Database
ISI
SICI code
0021-8979(1997)81:6<2740:DOHNMT>2.0.ZU;2-E
Abstract
Thin films of the ferromagnetic Heusler alloy NiMnSb, of interest for magnetic multilayer devices because of their predicted half-metallic ( i.e., 100% spin-polarized) transport properties, have been successfull y deposited by rf magnetron sputtering from a single composite target. A novel combination of low argon gas pressure, low deposition rates, and moderate substrate temperatures (250-350 degrees C) are shown to r esult in high-quality, low-roughness polycrystalline films of the C1(b )-type crystal structure, with thicknesses as low as 100 Angstrom, wit hout the need for any post-deposition annealing. The structural proper ties of these films, determined by x-ray diffraction and atomic force microscopy are presented as a function of deposition conditions. The m agnetic properties and resistivity are consistent with bulk MiMnSb, wh ich suggests that they will be effective as spin-polarized conducting layers in multilayer thin-film structures. (C) 1997 American Institute of Physics.