DIFFERENCE OF INTERFACE-TRAP PASSIVATION IN SCHOTTKY CONTACTS FORMED ON (NH4)(2)S-X-TREATED GAAS AND IN0.5GA0.5P

The effects of (NH4)(2)S-x treatments on the interface traps in Au/n-G aAs and Au/n-In0.5Ga0.5P Schottky contacts are investigated by deep le vel transient spectroscopy measurements. The interface trap concentrat ion in Au/GaAs increases when the residual S overlayer is sublimated a fter (NH4)(2)S-x treatments. But the trap concentration decreases when the S overlayer is rinsed by de-ionized water. in Au/InGaP, the phosp horus vacancy-related interface traps are passivated effectively by th e (NH4)(2)S-x treatment. These results are attributed to the fact that S bonds with As but not with P. (C) 1997 American Institute of Physic s.