IN-SITU CHARACTERIZATION OF THE ELECTRONI C-STRUCTURE OF AN ANODIC TITANIUM-OXIDE FROM CAPACITANCE MEASUREMENTS

Authors
DAFONSECA C BELO MDC
Citation
C. Dafonseca et Mdc. Belo, IN-SITU CHARACTERIZATION OF THE ELECTRONI C-STRUCTURE OF AN ANODIC TITANIUM-OXIDE FROM CAPACITANCE MEASUREMENTS, Comptes rendus de l'Academie des sciences. Serie 2, Mecanique, physique, chimie, sciences de l'univers, sciences de la terre, 318(6), 1994, pp. 753-759
Citations number
7
Categorie Soggetti
Multidisciplinary Sciences
Journal title
Comptes rendus de l'Academie des sciences. Serie 2, Mecanique, physique, chimie, sciences de l'univers, sciences de la terre → ACNP
ISSN journal
07644450
Volume
318
Issue
6
Year of publication
1994
Part
1
Pages
753 - 759
Database
ISI
SICI code
0764-4450(1994)318:6<753:ICOTEC>2.0.ZU;2-A
Abstract
A mathematical model to describe the capacitance behaviour of the amor phous semi-conductor Schottky barrier in the high depletion region is proposed. The model is based on the admittance theory of the amorphous silicon Schottky barrier and it is valid for polarisation values wher e the semi-conductor displays a Mott-Schottky like behaviour. The mode l is applied to the in situ study of the electronic properties of an a nodic titanium oxide. The calculated parameters are in good agreement with the ones calculated from the capacitance study in the low depleti on region.