A NEW CALCULATION APPROACH OF TRANSISTOR NOISE PARAMETERS AS A FUNCTION OF GATEWIDTH AND BIAS CURRENT

this paper a new method to calculate the noise parameters of transisto rs T-i (MESFET or HEMT) as a function of gatewidth and drain-bias curr ent is presented, This method needs the knowledge of the R, P, and C c oefficients, It is based on the measurement of the noise parameters of a reference transistor T-r at two bias points (I-ds1 and I-ds2), and the equivalent circuit elements' values of all transistors T-i. Using this method, the noise parameters (F-min, Gamma(opt), R(n)) for two ME SFET's T-i biased at another current I-ds3 are obtained. Good agreemen t between the predicted and measured noise parameters' values is obtai ned for a broad frequency range (4-20 GHz).