UNIBOND SYNTHESIS OF SILICON-ON-INSULATOR MATERIAL

High quality silicon on insulator (SOI) materials have been successful ly produced using the unibond method, a new member of SOI technology. The quality of SOI samples has been investigated by using cross-sectio n transmission electron microscopy, Rutherford backscattering and chan neling spectrometry and spreading resistance probe technology Experime ntal results indicate that both the thickness uniformity and the cryst alline quality of the top Si layer are good. The interface between the top Si layer and SiO2 buried layer is very sharp and straight.