MULTIPLE NONEXPONENTIAL DECAY OF PHOTOINDUCED EXCESS ELECTRONS IN HETEROSTRUCTURES

Authors
HE LX
Citation
Lx. He, MULTIPLE NONEXPONENTIAL DECAY OF PHOTOINDUCED EXCESS ELECTRONS IN HETEROSTRUCTURES, Chinese Physics Letters, 14(1), 1997, pp. 67-70
Citations number
8
Categorie Soggetti
Physics
Journal title
Chinese Physics Letters → ACNP
ISSN journal
0256307X
Volume
14
Issue
1
Year of publication
1997
Pages
67 - 70
Database
ISI
SICI code
0256-307X(1997)14:1<67:MNDOPE>2.0.ZU;2-8
Abstract
The derivative -dN(t)/dlgt of photo-induced excess electrons N(t) in G aAb-Al-0.3 Ga-0.7 As and In0.15Ga0.85As-Al0.2Ga0.8As heterostructures with respect to lgt shows a spectrum with pronounced peak-structure. T he apparent capture energies, the lifetime prefactors, the apparent li fetime distribution, and the derivative decay quantities of individual lifetimes were analyzed to distinguish capture mechanisms.