HIGH-TEMPERATURE COEFFICIENT OF RESISTANCE IN VANADIUM-OXIDE DIODES

Authors
KUZNETSOV VA HANEMAN D
Citation
Va. Kuznetsov et D. Haneman, HIGH-TEMPERATURE COEFFICIENT OF RESISTANCE IN VANADIUM-OXIDE DIODES, Review of scientific instruments, 68(3), 1997, pp. 1518-1520
Citations number
8
Categorie Soggetti
Physics, Applied","Instument & Instrumentation
Journal title
Review of scientific instruments → ACNP
ISSN journal
00346748
Volume
68
Issue
3
Year of publication
1997
Pages
1518 - 1520
Database
ISI
SICI code
0034-6748(1997)68:3<1518:HCORIV>2.0.ZU;2-T
Abstract
Evidence regarding the high temperature coefficient of resistance (35% per degrees C) in vanadium bride multiple thin film diodes has been o btained, indicating that the source is a vanadium oxide substance form ed between multiple layers of deposited vanadium. Effects of top conta cts are detailed. The devices also show high sensitivity to mechanical pressure. (C) 1997 American Institute of Physics.