MOCVD TECHNOLOGY FOR SEMICONDUCTORS

Authors
Citation
Ag. Thompson, MOCVD TECHNOLOGY FOR SEMICONDUCTORS, Materials letters, 30(4), 1997, pp. 255-263
Citations number
22
Categorie Soggetti
Material Science","Physics, Applied
Journal title
ISSN journal
0167577X
Volume
30
Issue
4
Year of publication
1997
Pages
255 - 263
Database
ISI
SICI code
0167-577X(1997)30:4<255:MTFS>2.0.ZU;2-S
Abstract
This article commences with a brief review of the MOCVD process as it applies to semiconductors. The various precursors used, including meta lorganic compounds, hydride gases, and dopants are discussed, together with the basic deposition process. Typical MOCVD systems used for R&D and manufacturing are described, including the constraints imposed by safety and environmental requirements. Recent advances in the R&D are na, such as growth mechanisms, new metalorganic materials, heteroepita xy, the use of alternative carrier gases, and reactor modeling are the n covered. In the manufacturing arena, large scale reactors, cost of o wnership (COO) models, and in situ controls are detailed. We conclude with a look at newer applications for materials prepared by MOCVD, inc luding multi-junction solar cells, high brightness LEDs covering the v isible spectrum, and laser diodes.