FLEXURAL STRENGTH CHANGE OF SILICON-NITRIDE IMPLANTED BY HIGH-DOSE TITANIUM IONS

Authors
ZHANG JZ YE XY CHANG J TAO K
Citation
Jz. Zhang et al., FLEXURAL STRENGTH CHANGE OF SILICON-NITRIDE IMPLANTED BY HIGH-DOSE TITANIUM IONS, Materials letters, 30(4), 1997, pp. 299-303
Citations number
15
Categorie Soggetti
Material Science","Physics, Applied
Journal title
Materials letters → ACNP
ISSN journal
0167577X
Volume
30
Issue
4
Year of publication
1997
Pages
299 - 303
Database
ISI
SICI code
0167-577X(1997)30:4<299:FSCOSI>2.0.ZU;2-T
Abstract
Silicon nitride ceramics were modified by Ti-ion implantation in a MEV VA (MEtal Vapor Vacuum Are) implanter. The influence of implantation p arameters was studied by varying the ion dose over a wide range. The s amples were implanted with 80 keV Ti ions with doses from 1 x 10(17) t o 3 x 10(18) Ti/cm(2) at temperatures between 400 and 750 degrees C. T he implantation dose strongly influences the flexural strength and mic rohardness of silicon nitride, increasing the flexural strength up to 14% relative to unimplanted silicon nitride.