WET-CHEMISTRY SURFACE-TREATMENT FOR DARK-CURRENT REDUCTION THAT PRESERVES LATERAL DIMENSIONS OF REACTIVE ION ETCHED GA0.47IN0.53AS P-I-N-DIODE PHOTODETECTORS

Authors
PORKOLAB GA CHEN YJ MERRITT SA TABATABAEI SA AGARWALA S JOHNSON FG KING O DAGENAIS M WILSON RA STONE DR
Citation
Ga. Porkolab et al., WET-CHEMISTRY SURFACE-TREATMENT FOR DARK-CURRENT REDUCTION THAT PRESERVES LATERAL DIMENSIONS OF REACTIVE ION ETCHED GA0.47IN0.53AS P-I-N-DIODE PHOTODETECTORS, IEEE photonics technology letters, 9(4), 1997, pp. 490-492
Citations number
7
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
9
Issue
4
Year of publication
1997
Pages
490 - 492
Database
ISI
SICI code
1041-1135(1997)9:4<490:WSFDRT>2.0.ZU;2-P
Abstract
A wet-chemistry treatment, consisting of a fresh mixture of one-to-one 2-propanol plus concentrated sulfuric acid added to photoresist devel oper, which is tetramethyl ammonium hydroxide, was found to reduce the dark-current density at the -5-V de reverse bias to 2 pA/mu m(2) (2 x 10(-4) A/cm(2)), and simultaneously to maintain the lateral geometric al dimensions, of reactive ion etched, 3 micrometer tall, right-cylind er mesa, Ga0.47In0.53As p-i-n diode photodetectors with diameters of 1 00, 50, and 25 mu m.