MICROWAVE SURFACE-RESISTANCE OF YBA2CU3O7-DELTA THIN-FILMS DEPOSITED BY PULSED ORGANOMETALLIC BEAM EPITAXY

The microwave surface resistance of superconducting YBa2Cu3O7-delta th in films deposited by pulsed organometallic beam epitaxy (POMBE) has b een characterized using the parallel plate transmission line resonator method. POMBE is an advanced organometallic chemical vapor deposition technique where precursor vapors are precisely metered onto the subst rate under computer control. In this study, the POMBE reactor was used to deposit epitaxial films of varying thicknesses onto LaAlO3 substra tes. The deposition procedure and surface-resistance results for films of varying thicknesses are described. The reduction of surface resist ance achieved supports the use of the POMBE technique as a possible me thod for preparing device-quality high-T(c) films and multi-layer stru ctures.