CONDUCTANCE OSCILLATIONS IN GE SI HETEROSTRUCTURES CONTAINING QUANTUMDOTS/

The conductance of the Si/p+-Ge/Si epitaxial heterostructure associate d with hole tunnelling into isolated ultrasmall (approximately 10 nm) quantum dots p+-Ge has been studied. Quantum dots have been obtained a fter islanding of 1.3 nm Ge film during MBE growth by the Stransky-Kra stanov mode method. Conductance oscillations as a function of bias vol tage were observed. The experimental data are analysed in terms of a m odel that involves the interplay of single-electron charging effects a nd resonant tunnelling through individual energy levels.