EFFECT OF LEVEL BROADENING ON THE PHOTOELECTRIC-EMISSION FROM A SINGLE-QUANTUM-WELL IN ULTRATHIN-FILM UNDER THE INFLUENCE OF A QUANTIZING MAGNETIC-FIELD

Authors
BOSE C CHAKRABORTY C SARKAR CK
Citation
C. Bose et al., EFFECT OF LEVEL BROADENING ON THE PHOTOELECTRIC-EMISSION FROM A SINGLE-QUANTUM-WELL IN ULTRATHIN-FILM UNDER THE INFLUENCE OF A QUANTIZING MAGNETIC-FIELD, Nanostructured materials, 8(1), 1997, pp. 83-90
Citations number
10
Categorie Soggetti
Material Science
Journal title
Nanostructured materials → ACNP
ISSN journal
09659773
Volume
8
Issue
1
Year of publication
1997
Pages
83 - 90
Database
ISI
SICI code
0965-9773(1997)8:1<83:EOLBOT>2.0.ZU;2-#
Abstract
The photoelectric emission from a quasi-two-dimensional electron gas ( Q2DEG) in a single quantum well (SQW)formed in wide-gap semiconductor films has been theoretically investigated, under magnetic quantization incorporating Landau level broadening arising due to electron impurit y scattering. The photoelectric current density has been computed for a Q2DEG formed in n-type GaAs film and is found to be modified in the presence of level broadening. The photoemission from a quasi-zero-dime nsional electron gas (Q0DEG)formed in the ultrathin film under the inf luence of a quantizing magnetic field applied normal to the film has a lso been compared with that for the Q0DEG formed in a quantum box.