UNIAXIAL-STRESS EFFECTS ON THE ELECTRONIC-PROPERTIES OF CARBON NANOTUBES

Using a semiempirical tight-binding approach modified through introduc tion of a deformation potential, we have calculated the effects of uni axial stress on the electronic density of states of carbon tubules. Fo r zigzag tubules (n,0) the gap varies linearly with stress and indepen dently of diameter: \dE(gap)/d sigma\ = 10.7 meV/GPa for \sigma\ < 10 GPa, and a semiconductor to metal transition is predicted. The behavio r is strongly dependent on whether n = 3q, 3q - 1, 3q + 1. The armchai r tubules remain metallic under all conditions studied.