ELECTRONIC-STRUCTURE OF THE GAAS-MN-GA CENTER

The excitation spectrum of the O.11-eV Mn acceptor in GaAs has been th oroughly investigated by uniaxial stress and Zeeman fourier transform infrared spectroscopy. The results give strong evidence for the 3d(5) + shallow hole model for the Mn-0 center. The deformation potentials a s well as the g values determined for the hole are in close agreement with those previously reported for the 1S(3/2)(Gamma(8)) State for sha llow accepters in GaAs. All experimental results are in accordance wit h a J = 1 ground-state level derived from exchange coupling of the sha llow 1S(3/2)(Gamma(8)) hole and the S = 5/2 Mn- core. A splitting betw een J = 2 and J = 1 levels in the range from 9 to 12 meV is inferred a nd is considerably larger than the 2-3 meV splitting previously sugges ted.