TRAPPING PROPERTIES OF CADMIUM VACANCIES IN CD1-XZNXTE

The trapping and thermal emission of holes were studied from a deep ac ceptor level created during thermal annealing of a Cd1-xZnxTe (x = 0.1 2) crystal grown by the high-pressure Bridgman (HPB) technique using t hermoelectric-effect spectroscopy and thermally stimulated current exp eriments. The deep level, which is usually absent in as-grown HPB Cd1- xZnxTe crystals, is assigned to the 2-/- acceptor level of Cd (Zn) vac ancies. The thermal ionization energy of the level is E(th) = (0.43 +/ - 0.01) eV, and the trapping cross section of holes was found to be si gma = (2.0 +/- 0.2) x 10(-16) cm(-2).