We use the k . p formalism to calculate Franz-Keldysh (FK) absorption
spectra in direct-band-gap III-V semiconductors. This method allows us
to include band anisotropy and nonparabolicity as well as band mixing
. With k . p models of various complexity, we investigate how these ph
enomena influence the main features of the electroabsorption using GaA
s as an example. We show that the dependence of the FK absorption on t
he polarization of the incoming light can be understood in analogy to
quasi-two-dimensional systems by mostly decoupled heavy- and light-hol
e bands involving the anisotropy of the bulk-momentum matrix elements.
On the other hand, the FK absorption tail and the periods of the FK o
scillations are mainly determined by the realistic energy dispersions
of the bands. We discuss the applicability and the limits of simplifie
d models and demonstrate that for most cases the field-induced interba
nd mixing is negligible in comparison with the zero-field coupling of
the bands. As an application, we show the consequences for the widely
used method to determine the electric held from the FK oscillation per
iods measured by absorption or photoreflectance experiments. Most of t
he basic features have been observed in experiments. The qualitative d
etails are of general validity.