Kp. Clark et al., NONPARABOLICITY EFFECTS IN THE BIPOLAR QUANTUM-WELL RESONANT-TUNNELING TRANSISTOR, Physical review. B, Condensed matter, 55(11), 1997, pp. 7068-7072
A numerical calculation of quantum-well resonant electron-state energi
es in the bipolar quantum-well resonant-tunneling transistor (BiQuaRTT
) is compared with experimental results. From the multiple-peak resona
nt-tunneling characteristics, the energies of resonant quasibound stat
es of the BiQuaRTT's triangular quantum well are determined. The elect
ron-state energies can be over 1 eV above the conduction-band edge, an
d are strongly influenced by conduction-band nonparabolicity, producin
g nearly equally spaced resonances in the BiQuaRTT.