NONPARABOLICITY EFFECTS IN THE BIPOLAR QUANTUM-WELL RESONANT-TUNNELING TRANSISTOR

A numerical calculation of quantum-well resonant electron-state energi es in the bipolar quantum-well resonant-tunneling transistor (BiQuaRTT ) is compared with experimental results. From the multiple-peak resona nt-tunneling characteristics, the energies of resonant quasibound stat es of the BiQuaRTT's triangular quantum well are determined. The elect ron-state energies can be over 1 eV above the conduction-band edge, an d are strongly influenced by conduction-band nonparabolicity, producin g nearly equally spaced resonances in the BiQuaRTT.