POSSIBLE EXPLANATION OF THE CONTRADICTORY RESULTS ON THE POROUS SILICON PHOTOLUMINESCENCE EVOLUTION AFTER LOW-TEMPERATURE TREATMENTS

Authors
Citation
B. Gelloz, POSSIBLE EXPLANATION OF THE CONTRADICTORY RESULTS ON THE POROUS SILICON PHOTOLUMINESCENCE EVOLUTION AFTER LOW-TEMPERATURE TREATMENTS, Applied surface science, 108(4), 1997, pp. 449-454
Citations number
20
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
ISSN journal
01694332
Volume
108
Issue
4
Year of publication
1997
Pages
449 - 454
Database
ISI
SICI code
0169-4332(1997)108:4<449:PEOTCR>2.0.ZU;2-W
Abstract
The modification of the porous silicon photoluminescence (PL) after a low level thermal oxidation at 300 degrees C is studied by analyzing t he surface chemical composition using infra-red spectroscopy. The amou nt of oxide is determined quantitatively. Two different porosities of porous silicon are studied: 70% and 80%. In the case of the 70% porosi ty porous layer, this thermal process leads to an important PL enhance ment in the early stages of oxygen incorporation followed by a degrada tion at higher oxidation levels whereas the photoluminescence of the 8 0% porosity porous layer only decreases. It is shown how this new anal ysis can account for the different and often contradictory results on the PL behavior under various low-temperature oxidation processes.