REAL-TIME OBSERVATION OF ALTERNATING GROWTH ON GASB(001) USING CORE-LEVEL PHOTOELECTRON-SPECTROSCOPY

Authors
MAEDA F WATANABE Y OSHIMA M
Citation
F. Maeda et al., REAL-TIME OBSERVATION OF ALTERNATING GROWTH ON GASB(001) USING CORE-LEVEL PHOTOELECTRON-SPECTROSCOPY, Applied surface science, 112, 1997, pp. 69-74
Citations number
12
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
112
Year of publication
1997
Pages
69 - 74
Database
ISI
SICI code
0169-4332(1997)112:<69:ROOAGO>2.0.ZU;2-S
Abstract
The alternating growth process of GaSb on a (001) surface was analyzed by real-time core-level photoelectron spectroscopy. Using intensity a nalysis at the Ga supply stage, Ga growth mode was found to change fro m 2D growth to 3D growth at substrate temperatures between 495 and 520 degrees C. Using intensity analysis at the Sb desorption stage, we fo und that the behavior of Sb atoms also changed at this temperature. Th ese results show that a substrate temperature of about 500 degrees C i s critical for the alternating growth of GaSb(001).