ATOMIC LAYER ETCHING OF GERMANIUM

Authors
IKEDA K IMAI S MATSUMURA M
Citation
K. Ikeda et al., ATOMIC LAYER ETCHING OF GERMANIUM, Applied surface science, 112, 1997, pp. 87-91
Citations number
20
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
112
Year of publication
1997
Pages
87 - 91
Database
ISI
SICI code
0169-4332(1997)112:<87:ALEOG>2.0.ZU;2-X
Abstract
Atomic layer etching of Ge has been investigated experimentally based on the surface chemistry that Cl can adsorb on the clean Ge surface at room temperature and desorb thermally as GeCl2 at high temperatures. The ideal etching rate of one monolayer per cycle has been achieved. T he critical Cl-2 dosage for the saturated etching rate was about 7.2 X 10(6) L. Increase of the surface roughness after etching of 100 cycle s was about 3.5 monolayers.