PRECISE CONTROL OF 2-DIMENSIONAL GROWTH OF INAS ON GAAS (111)A SURFACES STUDIED BY SCANNING-TUNNELING-MICROSCOPY

Authors
YAMAGUCHI H BELK JG ZHANG XM SUDIJONO JL FAHY MR JONES TS JOYCE BA
Citation
H. Yamaguchi et al., PRECISE CONTROL OF 2-DIMENSIONAL GROWTH OF INAS ON GAAS (111)A SURFACES STUDIED BY SCANNING-TUNNELING-MICROSCOPY, Applied surface science, 112, 1997, pp. 138-141
Citations number
11
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
112
Year of publication
1997
Pages
138 - 141
Database
ISI
SICI code
0169-4332(1997)112:<138:PCO2GO>2.0.ZU;2-W
Abstract
The results from reflection high-energy electron diffraction (RHEED) a nd scanning tunneling microscopy (STM) observations of the growth proc ess of InAs on GaAs (111)A substrates during solid source molecular be am epitaxy are presented. In contrast to the 3D growth mode observed f or InAs deposition on GaAs (001), there is no evidence for 3D island f ormation on the (111)A surface. The precise control of 2D growth of In As layers makes it possible to probe the early stages of strain relaxa tion by imaging misfit dislocations on the atomic scale by STM.